PROJECT TITLE :

Consistent DC and RF MOSFET Modeling Using an $S$-Parameter Measurement-Based Parameter Extraction Method in the Linear Region

ABSTRACT:

This paper demonstrates the feasibility of using knowledge extracted from experimental $S$ -parameters to implement models to accurately represent MOSFET behavior below DC and RF regimes with consistency. For this purpose, a technique to extract the MOSFET's drain-to-source conductance, the subthreshold swing, the source/drain resistance, the effective gate length, and the brink voltage is proposed. The strategy is based on the determination of the inverse of the channel resistance that is directly connected to the previously mentioned parameters. Hence, 2-port $S$ -parameter measurements of common-source configured RF-MOSFETs with different gate lengths are performed, varying the gate-to-supply voltage from the subthreshold region to sturdy inversion. In order to verify the validity and consistency of the method, wonderful correlation of DC and RF models with experimental information is achieved.