PROJECT TITLE :

Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain Electrodes

ABSTRACT:

We tend to revealed a unique technique to fabricate amorphous indium-zinc-oxide (a-IZO) skinny-film transistors (TFTs) with inverted staggered back-channel-etch structure and copper (Cu) source/drain (S/D) electrodes. In particular, a grey-tone mask was used to outline the S/D electrodes and active layer. The a-IZO layer acted not only as the active layer however additionally because the adhesive layer of Cu electrodes due to the great adhesion between Cu and a-IZO films. The presented TFTs exhibited a high saturated mobility of twelve.a pair of cm $^2$ /Vs, a threshold voltage of −0.4 V, and an occasional subthreshold swing of zero.22 V/decade. The great electrical performance and reliability were attributed to the great contact property between Cu electrodes and a-IZO layer and very little Cu atoms diffusing into the channel layer.