PROJECT TITLE :

Quasi-Single-Grain Pb(Zr,Ti)O 3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device

ABSTRACT:

Quasi-single-grained Pb(Zr,Ti)O 3 (PZT) was successfully grown for the gate dielectric of a poly-Si skinny-film transistor (TFT) in a metal-ferroelectric-insulator-semiconductor memory structure. The quasi-single-grained PZT was obtained by controlling the unreal nucleation fashioned by Pt dot arrays and was enlarged by the nucleated PZT seeds until it covers the poly-Si channel. The only-grained diameter size was 40 μm with a (100) dominated texture. The poly-Si memory device with the single-grained PZT showed glorious ferroelectric, electrical, and reliability properties compared with the poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in a PZT film showed the fatigue and retention characteristics with solely 1.1percent when 1013 cycles and 22p.c when 1 month.