PROJECT TITLE :

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

ABSTRACT:

Typical leakage current degradation behaviors are observed in lattice-matched In0.17Al0.83N/GaN Schottky structure, suggesting that the inverse piezoelectric impact might not be the major mechanism causing gate degradation in the stress-free GaN HEMTs. The low-field current is dominated by Poole–Frenkel emission of electrons with the compensation impact, indicative of the presence of deep-level acceptor-like traps in the surface barrier layer. A replacement surface cceptor-like entice model is developed to address the degradation kinetics, emphasizing that the high-field Fowler–Nordheim tunneling method might cause the generation of the acceptor-like defects, that could in turn introduce a thinner surface barrier to boost the tunneling element, and the corresponding threshold voltage should verify the essential voltage of gate degradation.