PROJECT TITLE :

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

ABSTRACT:

The lanthanum silicate interface engineering has been shown to dramatically improve the mobility of 4H-silicon carbide (SiC) MOSFETs. We tend to studied the impact of post deposition annealing (PDA) conditions and the initial lanthanum oxide (La2O3) thickness on the MOSFET performance. The mix of 90zero °C PDA and 1 nm La2O3 leads to highest field-result mobility. Higher PDA temperature leads to mobility reduction because of lower lanthanum concentration at the SiC/dielectric interface. The peak mobility and threshold voltage show strong dependence on the initial La2O3 thickness.