PROJECT TITLE :

Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices

ABSTRACT:

During this paper, we tend to model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have a tendency to have established an analytic equation for charge-pumping current. This equation appears to be a universal one since it's in agreement with CP experimental knowledge of various technologies devices. Instead of the classical considerations concerning a parasitic nature of the geometric component, during this paper, we tend to have demonstrated that it can be used to estimate the negative-bias temperature-instability-induced mobility degradation using the CP-based mostly strategies like on-the-fly interface trap.